STU6N65K3
Manufacturer:
Mfr. Part #:
--
Allchips #:
F004-STU6N65K3-35-A-0000-X-Y
Description:
N-Channel 650 V 5.4A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-251-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 5.4 A |
Rds On - Drain-Source On-Resistance | 1.1 Ohms |
Vgs th - gate-source threshold voltage | 3.75 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 33 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 24 ns |
Pd - Power Dissipation | 110 W |
Rise Time | 10 ns |
Series | N-channel MDmesh |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 44 ns |
Typical turn-on delay time | 14 ns |
Unit weight | 4 g |
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