STW11NM80
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - continuous drain current | 11 A |
Rds On - Drain-Source On-Resistance | 400 mOhms |
Vgs - gate-source voltage | 30 V |
Minimum working temperature | - 65 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 15 ns |
Forward transconductance - minimum | 8 S |
Height | 20.15 mm |
Length | 15.75 mm |
Pd - Power Dissipation | 150 W |
Rise Time | 17 ns |
Series | STB11NM80 |
Factory packing quantity | 600 |
Transistor type | 1 N-Channel |
Types | MOSFET |
Typical shutdown delay time | 46 ns |
Typical turn-on delay time | 22 ns |
Width | 5.15 mm |
Unit weight | 38 g |
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