STWA40N95K5
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 950 V |
Id - continuous drain current | 38 A |
Rds On - Drain-Source On-Resistance | 0.11 Ohms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 93 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Forward transconductance - minimum | - |
Pd - Power Dissipation | 450 W |
Rise Time | 51 ns |
Series | MDmesh K5 |
Factory packing quantity | 600 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 91.5 ns |
Typical turn-on delay time | 33.5 ns |
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