VND5N07-E
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 70 V |
Id - continuous drain current | 5 A |
Rds On - Drain-Source On-Resistance | 200 mOhms |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Forward transconductance - minimum | 4 S |
Pd - Power Dissipation | 60 W |
Series | VND5N07-E |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Types | Power MOSFET |
Unit weight | 4 g |
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