OP506B
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | T-1-2 |
Installation style | Through Hole |
Peak wavelength | 935 nm |
Open the state of the maximum collector current | 5.95 mA |
Collector - Emitter maximum voltage VCEO | 30 V |
Dark current | 100 nA |
Pd - Power Dissipation | 100 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 100 C |
Collector - emitter breakdown voltage | 30 V |
Collector - emitter saturation voltage | 0.4 V |
Height | 5.08 mm |
Lens color / type | Blue |
Factory packing quantity | 500 |
Types | NPN Silicon Phototransistor |
Wavelength | 935 nm |
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