OP800B
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | TO-18-3 |
Installation style | Through Hole |
Peak wavelength | 890 nm |
Open the state of the maximum collector current | 5.4 mA |
Collector - Emitter maximum voltage VCEO | 30 V |
Dark current | 100 nA |
Rise Time | 7 us |
Fall time | 7 us |
Pd - Power Dissipation | 250 mW |
Minimum working temperature | - 65 C |
The maximum working temperature | + 125 C |
Collector - emitter breakdown voltage | 30 V |
Height | 7.61 mm |
Length | 4.75 mm |
Factory packing quantity | 500 |
Types | NPN Silicon Phototransistor |
Wavelength | 890 nm |
Width | 4.75 mm |
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