CSD16327Q3
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | VSON-Clip-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 4.8 mOhm |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 10 V |
Qg - gate charge | 6.2 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Height | 1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 3 W |
Series | CSD16327Q3 |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Width | 3.3 mm |
Unit weight | 44 mg |
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