CSD16570Q5BT
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | VSON-Clip-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 0.68 mOhm |
Vgs th - gate-source threshold voltage | 1.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 192 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 85 C |
Configuration | Single |
Fall time | 72 ns |
Height | 1 mm |
Length | 6 mm |
Pd - Power Dissipation | 195 W |
Rise Time | 43 ns |
Series | CSD16570Q5 |
Factory packing quantity | 250 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 156 ns |
Typical turn-on delay time | 5 ns |
Width | 5 mm |
Unit weight | 24 mg |
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