CSD18501Q5A
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | VSONP-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 60 A |
Rds On - Drain-Source On-Resistance | 3.3 mOhm |
Vgs th - gate-source threshold voltage | 1.8 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 42 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Height | 1 mm |
Length | 6 mm |
Pd - Power Dissipation | 3.1 W |
Series | CSD18501Q5A |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Width | 4.9 mm |
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