LF412CDR
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOIC-8 |
Supply Voltage - Max | 36 V |
Number of channels | 2 Channel |
GBP - Gain Bandwidth Product | 3 MHz |
SR - Conversion Rate | 13 V/us |
CMRR - Common Mode Rejection Ratio | 70 dB to 100 dB |
Ib - Input bias current | 200 pA |
Vos - Input bias voltage | 3 mV |
Supply Voltage - Min | 7 V |
Working power supply current | 2.25 mA |
The maximum working temperature | + 70 C |
Minimum working temperature | 0 C |
Shut down | No Shutdown |
Series | LF412 |
Amplifier type | High Speed Amplifier |
Dual supply voltage | +/- 5 V, +/- 9 V, +/- 12 V, +/- 15 V |
en - Input Voltage Noise Density | 18 nV/sqrt Hz |
Height | 1.58 mm |
In- Input Noise Current Density | 0.01 pA/sqrt Hz |
Length | 4.9 mm |
Maximum dual supply voltage | +/- 18 V |
Minimum dual supply voltage | +/- 3.5 V |
Operating supply voltage | 7 V to 36 V, +/- 3.5 V to +/- 18 V |
Pd - Power Dissipation | 500 mW (1/2 W) |
Product | Operational Amplifiers |
Factory packing quantity | 2500 |
Power type | Dual |
Technology | BiFET |
Vcm - common-mode voltage | Negative Rail + 4 V to Positive Rail - 4 V |
Voltage gain dB | 106.02 dB |
Width | 3.91 mm |
Unit weight | 72.600 mg |
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