LT1013DDR
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Specification
RoHS | yes |
Series | LT1013D |
Number of channels | 2 Channel |
GBP - Gain Bandwidth Product | 1 MHz |
SR - Conversion Rate | 0.4 V/us |
CMRR - Common Mode Rejection Ratio | 97 dB to 114 dB |
Ib - Input bias current | 30 nA |
Vos - Input bias voltage | 0.8 mV |
en - Input Voltage Noise Density | 24 nV/sqrt Hz |
Supply Voltage - Max | 44 V |
Supply Voltage - Min | 4 V |
Working power supply current | 350 uA |
The maximum working temperature | + 125 C |
Minimum working temperature | - 55 C |
Shut down | No Shutdown |
Installation style | SMD/SMT |
Package / case | SOIC-8 |
Amplifier type | Low Offset Voltage Amplifier |
Dual supply voltage | +/- 3 V, +/- 5 V, +/- 9 V |
Height | 1.58 mm |
In- Input Noise Current Density | 0.07 pA/sqrt Hz |
Input type | Rail-to-Rail |
Length | 4.9 mm |
Maximum dual supply voltage | +/- 22 V |
Minimum dual supply voltage | +/- 2 V |
Operating supply voltage | 4 V to 44 V, +/- 2 V to +/- 22 V |
Product | Precision Amplifiers |
Factory packing quantity | 2500 |
Power type | Single, Dual |
Technology | Bipolar |
Vcm - common-mode voltage | Negative Rail to Positive Rail - 1.5 V |
Voltage gain dB | 120 dB |
Width | 3.91 mm |
Unit weight | 72.600 mg |
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