TLV2332IDR
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOIC-8 |
Supply Voltage - Max | 8 V |
Output current per channel | 30 mA |
Number of channels | 2 Channel |
GBP - Gain Bandwidth Product | 525 kHz |
SR - Conversion Rate | 0.43 V/us |
CMRR - Common Mode Rejection Ratio | 65 dB to 91 dB |
Ib - Input bias current | 200 pA |
Vos - Input bias voltage | 9 mV |
Supply Voltage - Min | 2 V |
Working power supply current | 105 uA |
The maximum working temperature | + 85 C |
Minimum working temperature | - 40 C |
Shut down | No Shutdown |
Series | TLV2332 |
Amplifier type | Low Power Amplifier |
en - Input Voltage Noise Density | 32 nV/sqrt Hz |
Height | 1.58 mm |
Input type | Rail-to-Rail |
Length | 4.9 mm |
Minimum dual supply voltage | +/- 1 V |
Operating supply voltage | 2 V to 8 V, +/- 1 V to +/- 4 V |
Output type | Rail-to-Rail |
Pd - Power Dissipation | 725 mW |
Product | Operational Amplifiers |
Factory packing quantity | 2500 |
Power type | Single, Dual |
Technology | LinCMOS |
Vcm - common-mode voltage | Negative Rail - 0.2 V to Positive Rail - 1 V |
Voltage gain dB | 104.61 dB |
Width | 3.91 mm |
Unit weight | 72.600 mg |
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TLV2332IDR Releted Information
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