2SJ668(TE16L1,NQ)
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PW-Mold-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 60 V |
Id - continuous drain current | - 5 A |
Rds On - Drain-Source On-Resistance | 170 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 14 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 20 W |
Product | MOSFET Small Signal |
Rise Time | 14 ns |
Series | 2SJ668 |
Factory packing quantity | 2000 |
Transistor type | 1 P-Channel |
Width | 5.5 mm |
Unit weight | 363 mg |
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