SSM3J327R,LF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 3.9 A |
Rds On - Drain-Source On-Resistance | 240 mOhms |
Vgs th - gate-source threshold voltage | - 1 V |
Vgs - gate-source voltage | 8 V |
Qg - gate charge | 4.6 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Height | 0.9 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 2 W |
Series | SSM3J327 |
Factory packing quantity | 3000 |
Width | 1.3 mm |
Unit weight | 8 mg |
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