SSM3K56MFV,L3F
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-723-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 800 mA |
Rds On - Drain-Source On-Resistance | 186 mOhms |
Vgs th - gate-source threshold voltage | 400 mV |
Vgs - gate-source voltage | 8 V |
Qg - gate charge | 1 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Height | 0.5 mm |
Length | 1.2 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Series | SSM3K56 |
Factory packing quantity | 8000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 8.5 ns |
Typical turn-on delay time | 5.5 ns |
Width | 0.8 mm |
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