SSM6J507NU,LF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | UDFN6B-6 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 10 A |
Rds On - Drain-Source On-Resistance | 32 mOhms |
Vgs th - gate-source threshold voltage | - 2.2 V |
Vgs - gate-source voltage | - 25 V / + 20 V |
Qg - gate charge | 13.6 nC |
Configuration | Single |
Height | 0.75 mm |
Length | 2 mm |
Pd - Power Dissipation | 1.25 W |
Series | SSM6J507 |
Factory packing quantity | 3000 |
Typical shutdown delay time | 170 ns |
Typical turn-on delay time | 55 ns |
Width | 2 mm |
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