SSM6N55NU,LF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | UDFN-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 4 A |
Rds On - Drain-Source On-Resistance | 64 mOhms |
Vgs th - gate-source threshold voltage | 1.3 V to 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 2.5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Height | 0.75 mm |
Length | 2 mm |
Pd - Power Dissipation | 1 W |
Series | SSM6N55 |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Width | 2 mm |
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