BPW76B
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | TO-18 |
Installation style | Through Hole |
Peak wavelength | 850 nm |
Open the state of the maximum collector current | 50 mA |
Collector - Emitter maximum voltage VCEO | 70 V |
Dark current | 100 nA |
Pd - Power Dissipation | 250 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 125 C |
Collector - emitter breakdown voltage | 70 V |
Collector - emitter saturation voltage | 0.15 V |
Half strength angle | 40 deg |
Height | 5.2 mm |
Length | 5.5 mm |
Lens color / type | Clear |
Weak current | 0.8 mA |
Factory packing quantity | 1000 |
Types | Chip |
Wavelength | 850 nm |
Width | 5.5 mm |
Others include "BPW76B" parts
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