BPW85A
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | T-1 |
Installation style | Through Hole |
Peak wavelength | 850 nm |
开启状态集电极最大电流 | 50 mA |
Collector - Emitter maximum voltage VCEO | 70 V |
暗电流 | 200 nA |
Pd - Power Dissipation | 100 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 100 C |
集电极—射极击穿电压 | 70 V |
Collector - emitter saturation voltage | 0.3 V |
半强度角度 | 25 deg |
Height | 4.5 mm |
Length | 3.4 mm |
Lens color / type | Clear |
弱电流 | 2.5 mA |
Factory packing quantity | 5000 |
Types | Chip |
Wavelength | 850 nm |
Width | 3.4 mm |
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