BPW85C
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | T-1 |
Installation style | Through Hole |
Peak wavelength | 850 nm |
Open the state of the maximum collector current | 50 mA |
Collector - Emitter maximum voltage VCEO | 70 V |
Dark current | 200 nA |
Pd - Power Dissipation | 100 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 100 C |
Collector - emitter breakdown voltage | 70 V |
Collector - emitter saturation voltage | 0.3 V |
Half strength angle | 25 deg |
Height | 4.5 mm |
Length | 3.4 mm |
Lens color / type | Clear |
Weak current | 8 mA |
Factory packing quantity | 5000 |
Types | Chip |
Wavelength | 850 nm |
Width | 3.4 mm |
Others include "BPW85C" parts
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