CNY64B
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Specification
Product Category | 晶体管输出光电耦合器 |
Manufacturer | Vishay |
RoHS | yes |
Package / case | DIP-4 |
Output type | NPN Phototransistor |
Number of channels | 1 Channel |
If - Forward current | 50 mA |
Maximum Collector / Emitter Voltage | 32 V |
Maximum collector current | 50 mA |
Insulation voltage | 8200 Vrms |
Maximum collector / emitter saturation voltage | 0.3 V |
Vf - forward voltage | 1.6 V |
Vr - reverse voltage | 5 V |
Pd - Power Dissipation | 250 mW |
The maximum working temperature | + 85 C |
Minimum working temperature | - 55 C |
Series | CNY |
Trademark | Vishay Semiconductors |
Collector - emitter breakdown voltage | 32 V |
Configuration | 1 Channel |
Current transfer ratio | 100 % to 200 % |
Description / function | Optocoupler, Phototransistor Output, Very High Isolation Voltage |
Fall time | 2.7 us |
Height | 6 mm |
Length | 12.8 mm |
Installation style | Through Hole |
Rise Time | 2.4 us |
Factory packing quantity | 40 |
Width | 7.2 mm |
Unit weight | 15.876 g |
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