SQ2389ES-T1_GE3
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V |
Id - continuous drain current | - 4.1 A |
Rds On - Drain-Source On-Resistance | 0.084 Ohms |
Vgs th - gate-source threshold voltage | - 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 12 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q101 |
Channel mode | Enhancement |
Fall time | 4 ns |
Forward transconductance - minimum | 5 S |
Pd - Power Dissipation | 3 W |
Rise Time | 12 ns |
Series | SQ |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 16 ns |
Typical turn-on delay time | 7 ns |
Unit weight | 8 mg |
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