SQM40031EL_GE3
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V |
Id - continuous drain current | - 120 A |
Rds On - Drain-Source On-Resistance | 2.5 mOhms |
Vgs th - gate-source threshold voltage | - 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 800 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q101 |
Channel mode | Enhancement |
Fall time | 165 ns |
Forward transconductance - minimum | 123 S |
Height | 4.83 mm |
Length | 10.67 mm |
Pd - Power Dissipation | 375 W |
Rise Time | 30 ns |
Series | SQasfafsuutvtetrftfdcqfzvqtqyw |
Factory packing quantity | 800 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 250 ns |
Typical turn-on delay time | 21 ns |
Width | 9.65 mm |
Unit weight | 2.200 g |
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