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2DD2661-13

Non-unpack
Specification
--
Mf Part No.
--
Brand
Diodes Incorporated
Item Category
Bipolar Transistors - BJT
BatchNumber
--
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Diodes Incorporated 2DD2661-13 is available at Allchips.100% original and new guarantee. If comprehensive data for 2DD2661-13 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-89-3
Transistor polarity
NPN
Configuration
Single
Collector - Emitter maximum voltage VCEO
12 V
Collector-base voltage VCBO
15 V
Emitter-base voltage VEBO
6 V
Collector - emitter saturation voltage
180 mV
最大直流电集电极电流
4 A
Gain Bandwidth Product fT
170 MHz
The maximum working temperature
+ 150 C
Series
2DD2
直流集电极/Base Gain hfe Min
270 at 200 mA, 2 V
直流电流增益 hFE 最大值
270
Height
1.5 mm
Length
4.5 mm
Minimum working temperature
- 55 C
Pd - Power Dissipation
2000 mW
Factory packing quantity
2500
Width
2.5 mm
Unit weight
52 mg

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