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DMG6402LVT-7
Specification
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Mf Part No.
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Brand
Diodes Incorporated
Item Category
MOSFET
BatchNumber
--
MPQ
3000
Stock
0
MOQ
3000
Tiered Quantity
US Dollar
1
$2.9601
10
$2.0358
100
$0.94419
1000
$0.71955
3000
$0.61542
9000
$0.56043
24000
$0.52767
45000
$0.47151
99000
$0.4563
Lead Time:5-7
Days
Stock Limited
- Details
- Shipping
- Payment Method
- Guarantee
Diodes Incorporated
DMG6402LVT-7
is available at Allchips.100% original and new guarantee. If comprehensive data for
DMG6402LVT-7
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TSOT-26-6
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
6 A
Rds On - Drain-Source On-Resistance
30 mOhms
Vgs th - gate-source threshold voltage
1.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
11.4 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
2.8 ns
Pd - Power Dissipation
1.75 W
Rise Time
6.2 ns
Series
DMG6402
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
13.9 ns
Typical turn-on delay time
3.4 ns
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