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DMN10H170SVT-7

Non-unpack
Specification
--
Mf Part No.
--
Brand
Diodes Incorporated
Item Category
MOSFET
BatchNumber
--
  • Details
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Diodes Incorporated DMN10H170SVT-7 is available at Allchips.100% original and new guarantee. If comprehensive data for DMN10H170SVT-7 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TSOT-26-6
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
2.6 A
Rds On - Drain-Source On-Resistance
115 mOhms
Vgs th - gate-source threshold voltage
1 V
Vgs - gate-source voltage
20 V
Qg - gate charge
9.7 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
12 ns
Height
1 mm
Length
2.9 mm
Pd - Power Dissipation
1.2 W
Rise Time
11 ns
Series
DMN10
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
42 ns
Typical turn-on delay time
10 ns
Width
1.6 mm

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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