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DMN3070SSN-7
Specification
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Mf Part No.
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Brand
Diodes Incorporated
Item Category
MOSFET
BatchNumber
--
MPQ
3000
Stock
0
MOQ
3000
Tiered Quantity
US Dollar
1
$2.9601
10
$2.2113
100
$1.2051
1000
$0.90441
3000
$0.77571
9000
$0.72774
24000
$0.67158
45000
$0.63999
99000
$0.61542
Lead Time:5-7
Days
- Details
- Shipping
- Payment Method
- Guarantee
Diodes Incorporated
DMN3070SSN-7
is available at Allchips.100% original and new guarantee. If comprehensive data for
DMN3070SSN-7
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SC-59-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
4.2 A
Rds On - Drain-Source On-Resistance
24 mOhms
Vgs th - gate-source threshold voltage
1.1 V
Vgs - gate-source voltage
20 V
Qg - gate charge
13.2 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
4.1 ns
Pd - Power Dissipation
780 mW
Rise Time
20.1 ns
Series
DMN3070
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
4.4 ns
Typical turn-on delay time
4.3 ns
Unit weight
8 mg
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