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DMN3070SSN-7

Specification

Mf Part No.

Brand

Diodes Incorporated

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

SC-59-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - continuous drain current

4.2 A

Rds On - Drain-Source On-Resistance

24 mOhms

Vgs th - gate-source threshold voltage

1.1 V

Vgs - gate-source voltage

20 V

Qg - gate charge

13.2 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Enhancement

Fall time

4.1 ns

Pd - Power Dissipation

780 mW

Rise Time

20.1 ns

Series

DMN3070

Factory packing quantity

3000

Transistor type

1 N-Channel

Typical shutdown delay time

4.4 ns

Typical turn-on delay time

4.3 ns

Unit weight

8 mg

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