Specification
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
PowerDI3333-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - continuous drain current
80 A
Rds On - Drain-Source On-Resistance
4.5 mOhms
Vgs th - gate-source threshold voltage
800 mV
Vgs - gate-source voltage
20 V
Qg - gate charge
41.3 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
9.7 ns
Forward transconductance - minimum
100 S
Pd - Power Dissipation
2.2 W
Rise Time
4.3 ns
Series
DMT6007
Factory packing quantity
2000
Transistor type
1 N-Channel
Typical shutdown delay time
23.4 ns
Typical turn-on delay time
5.7 ns
