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MMBTH10-7-F

Non-unpack
Specification
--
Mf Part No.
--
Brand
Diodes Incorporated
Item Category
Bipolar Transistors - BJT
BatchNumber
--
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Diodes Incorporated MMBTH10-7-F is available at Allchips.100% original and new guarantee. If comprehensive data for MMBTH10-7-F to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-23-3
Transistor polarity
NPN
Configuration
Single
Collector - Emitter maximum voltage VCEO
25 V
Collector-base voltage VCBO
30 V
Emitter-base voltage VEBO
3 V
Collector - emitter saturation voltage
0.5 V
最大直流电集电极电流
0.05 A
Gain Bandwidth Product fT
650 MHz
The maximum working temperature
+ 150 C
Series
MMBTH10
Continuous collector current
0.05 A
直流集电极/Base Gain hfe Min
60
Height
1 mm
Length
3.05 mm
Minimum working temperature
- 55 C
Pd - Power Dissipation
300 mW
Factory packing quantity
3000
Width
1.4 mm
Unit weight
8 mg

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