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ZXT11N15DFTA

Specification

Mf Part No.

Brand

Diodes Incorporated

Item Category

Bipolar Transistors - BJT

BatchNumber

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Specification

RoHS

Installation style

SMD/SMT

Package / case

SOT-23-3

Transistor polarity

NPN

Configuration

Single

Collector - Emitter maximum voltage VCEO

15 V

Collector-base voltage VCBO

40 V

Emitter-base voltage VEBO

7.5 V

Collector - emitter saturation voltage

110 mV

最大直流电集电极电流

3 A

Gain Bandwidth Product fT

145 MHz

The maximum working temperature

+ 150 C

Series

ZXT11N15

Continuous collector current

3 A

直流集电极/Base Gain hfe Min

200 at 10 mA at 2 V, 300 at 200 mA at 2 V, 250 at 1 A at 2 V, 200 at 3 A at 2 V, 150 at 5 A at 2 V

直流电流增益 hFE 最大值

200 at 10 mA at 2 V

Height

1 mm

Length

3.05 mm

Minimum working temperature

- 55 C

Pd - Power Dissipation

625 mW

Factory packing quantity

3000

Width

1.4 mm

Unit weight

8 mg

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