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ZXT11N15DFTA
Specification
--
Mf Part No.
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Brand
Diodes Incorporated
Item Category
Bipolar Transistors - BJT
BatchNumber
--
MPQ
3000
Stock
0
MOQ
3000
Tiered Quantity
US Dollar
1
$5.0427
10
$4.1301
100
$2.5155
1000
$1.9539
3000
$1.6614
9000
$1.5561
24000
$1.4742
45000
$1.4274
Lead Time:5-7
Days
If you need it, please contact our customer service
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Diodes Incorporated
ZXT11N15DFTA
is available at Allchips.100% original and new guarantee. If comprehensive data for
ZXT11N15DFTA
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
no
Installation style
SMD/SMT
Package / case
SOT-23-3
Transistor polarity
NPN
Configuration
Single
Collector - Emitter maximum voltage VCEO
15 V
Collector-base voltage VCBO
40 V
Emitter-base voltage VEBO
7.5 V
Collector - emitter saturation voltage
110 mV
最大直流电集电极电流
3 A
Gain Bandwidth Product fT
145 MHz
The maximum working temperature
+ 150 C
Series
ZXT11N15
Continuous collector current
3 A
直流集电极/Base Gain hfe Min
200 at 10 mA at 2 V, 300 at 200 mA at 2 V, 250 at 1 A at 2 V, 200 at 3 A at 2 V, 150 at 5 A at 2 V
直流电流增益 hFE 最大值
200 at 10 mA at 2 V
Height
1 mm
Length
3.05 mm
Minimum working temperature
- 55 C
Pd - Power Dissipation
625 mW
Factory packing quantity
3000
Width
1.4 mm
Unit weight
8 mg
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