Specification
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Mf Part No.
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BatchNumber
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Lead time
MOQ
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Specification
RoHS
no
Product
Phototransistors
Package / case
T-1
Installation style
Through Hole
Peak wavelength
935 nm
Collector - Emitter maximum voltage VCEO
30 V
暗电流
100 nA
Rise Time
15 us
Fall time
15 us
Pd - Power Dissipation
70 mW
Minimum working temperature
- 40 C
The maximum working temperature
+ 85 C
集电极—射极击穿电压
30 V
Collector - emitter saturation voltage
0.4 V
半强度角度
50 deg
Height
5.72 mm
Length
4.45 mm
Lens color / type
Clear
弱电流
6 mA
Factory packing quantity
100
Types
Photodetector Transistors
Width
2.28 mm
