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IXTH1N200P3HV

Non-unpack
Specification
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Mf Part No.
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Brand
IXYS
Item Category
MOSFET
BatchNumber
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IXYS IXTH1N200P3HV is available at Allchips.100% original and new guarantee. If comprehensive data for IXTH1N200P3HV to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-247-3
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
2000 V
Id - continuous drain current
1 A
Rds On - Drain-Source On-Resistance
40 Ohms
Vgs th - gate-source threshold voltage
2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
23.5 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
80 ns
Forward transconductance - minimum
400 mS
Pd - Power Dissipation
125 W
Rise Time
26 ns
Factory packing quantity
30
Typical shutdown delay time
37 ns
Typical turn-on delay time
16 ns

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TNT TNT $25.00-$65.00(0.50KG) 2-5 days
EMS EMS $25.00-$45.00(0.50KG) 4-15 days
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FedEX $20.00-$40.00(0.50KG) 3-7 days
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