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IXTY02N50D
Specification
--
Mf Part No.
--
Brand
IXYS
Item Category
MOSFET
BatchNumber
--
MPQ
70
Stock
0
MOQ
70
Tiered Quantity
US Dollar
1
$11.3607
10
$9.6759
100
$7.3944
500
$6.5403
1000
$5.1597
2500
$4.5747
10000
$4.4109
Lead Time:5-7
Days
If you need it, please contact our customer service
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IXYS
IXTY02N50D
is available at Allchips.100% original and new guarantee. If comprehensive data for
IXTY02N50D
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - continuous drain current
200 mA
Rds On - Drain-Source On-Resistance
30 Ohms
Vgs th - gate-source threshold voltage
-
Vgs - gate-source voltage
20 V
Qg - gate charge
-
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Depletion
Development Kit
-
Fall time
4 ns
Forward transconductance - minimum
-
Height
2.38 mm
Length
6.73 mm
Pd - Power Dissipation
1.1 W
Product
MOSFET Small Signal
Rise Time
4 ns
Series
IXTY02N50
Factory packing quantity
70
Transistor type
1 N-Channel
Types
-
Typical shutdown delay time
28 ns
Typical turn-on delay time
9 ns
Width
6.22 mm
Unit weight
2.300 g
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