Specification
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Brand
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BatchNumber
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - continuous drain current
200 mA
Rds On - Drain-Source On-Resistance
30 Ohms
Vgs th - gate-source threshold voltage
-
Vgs - gate-source voltage
20 V
Qg - gate charge
-
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Depletion
Development Kit
-
Fall time
4 ns
Forward transconductance - minimum
-
Height
2.38 mm
Length
6.73 mm
Pd - Power Dissipation
1.1 W
Product
MOSFET Small Signal
Rise Time
4 ns
Series
IXTY02N50
Factory packing quantity
70
Transistor type
1 N-Channel
Types
-
Typical shutdown delay time
28 ns
Typical turn-on delay time
9 ns
Width
6.22 mm
Unit weight
2.300 g
