Specification
Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1815
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BSC032NE2LSATMA1
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BSC032NE2LSATMA1
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TDSON-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
25 V
Id - continuous drain current
84 A
Rds On - Drain-Source On-Resistance
2.7 mOhms
Vgs th - gate-source threshold voltage
1.2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
21 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
2.2 ns
Forward transconductance - minimum
46 S
Height
1.27 mm
Length
5.9 mm
Pd - Power Dissipation
37 W
Rise Time
2.8 ns
Factory packing quantity
5000
Transistor type
1 N-Channel
Typical shutdown delay time
15 ns
Typical turn-on delay time
3.3 ns
Width
5.15 mm
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