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BSO615CGHUMA1
Specification
--
Mf Part No.
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Brand
Infineon
Item Category
MOSFET
BatchNumber
--
MPQ
2500
Stock
0
MOQ
2500
Tiered Quantity
US Dollar
1
$7.5231
10
$6.3882
100
$4.9023
500
$4.3407
1000
$3.4281
2500
$3.042
10000
$2.925
25000
$2.8314
Lead Time:5-7
Days
Stock Limited
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- Shipping
- Payment Method
- Guarantee
Infineon
BSO615CGHUMA1
is available at Allchips.100% original and new guarantee. If comprehensive data for
BSO615CGHUMA1
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SO-8
Number of channels
2 Channel
Transistor polarity
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage
60 V, - 60 V
Id - continuous drain current
3.1 A, - 2 A
Rds On - Drain-Source On-Resistance
70 mOhms, 190 mOhms
Vgs th - gate-source threshold voltage
1.2 V, - 2 V
Vgs - gate-source voltage
20 V, 20 V
Qg - gate charge
22.5 nC, 20 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Dual
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
18 ns, 90 ns
Forward transconductance - minimum
2.25 S, 1.2 S
Height
1.75 mm
Length
4.9 mm
Pd - Power Dissipation
2 W
Rise Time
75 ns, 105 ns
Series
BSO615
Factory packing quantity
2500
Transistor type
1 N-Channel, 1 P-Channel
Typical shutdown delay time
25 ns, 125 ns
Typical turn-on delay time
16 ns, 24 ns
Width
3.9 mm
Unit weight
540 mg
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