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BSS308PE H6327
Specification
Trans MOSFET P-CH 30V 2A Automotive 3-Pin SOT-23 T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
--
MPQ
1
Stock
21882
MOQ
63
Tiered Quantity
US Dollar
63
$0.2537
100
$0.2308
200
$0.2104
500
$0.153
Lead Time:6-12
Days
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- Payment Method
- Guarantee
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BSS308PE H6327
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BSS308PE H6327
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-23-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 30 V
Id - continuous drain current
- 2 A
Rds On - Drain-Source On-Resistance
62 mOhms
Vgs th - gate-source threshold voltage
- 2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
- 5 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
2.8 ns
Forward transconductance - minimum
4.6 S
Height
1.1 mm
Length
2.9 mm
Pd - Power Dissipation
500 mW (1/2 W)
Rise Time
7.7 ns
Series
BSS308
Factory packing quantity
3000
Transistor type
1 P-Channel
Typical shutdown delay time
15.3 ns
Typical turn-on delay time
5.6 ns
Width
1.3 mm
Unit weight
8 mg
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