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BSS316NH6327XTSA1
Specification
Trans MOSFET N-CH 30V 1.4A Automotive 3-Pin SOT-23 T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1810
MPQ
3000
Stock
42000
MOQ
3000
Tiered Quantity
US Dollar
1
$0.0675
Lead Time:6-12
Days
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BSS316NH6327XTSA1
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BSS316NH6327XTSA1
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-23-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
1.4 A
Rds On - Drain-Source On-Resistance
119 mOhms
Vgs th - gate-source threshold voltage
1.2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
600 pC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
1 ns
Forward transconductance - minimum
2.3 S
Height
1.1 mm
Length
2.9 mm
Pd - Power Dissipation
500 mW (1/2 W)
Rise Time
2.3 ns
Series
BSS316
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
5.8 ns
Typical turn-on delay time
3.4 ns
Width
1.3 mm
Unit weight
8 mg
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