Specification
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Mf Part No.
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Brand
Infineon
Item Category
MOSFET
BatchNumber
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Infineon
BSZ440N10NS3GATMA1
is available at Allchips.100% original and new guarantee. If comprehensive data for
BSZ440N10NS3GATMA1
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TSDSON-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
18 A
Rds On - Drain-Source On-Resistance
38 mOhms
Vgs th - gate-source threshold voltage
2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
9.1 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
2 ns
Forward transconductance - minimum
8 S
Height
1.1 mm
Length
3.3 mm
Pd - Power Dissipation
29 W
Rise Time
1.8 ns
Series
OptiMOS 3
Factory packing quantity
5000
Transistor type
1 N-Channel
Typical shutdown delay time
9.1 ns
Typical turn-on delay time
4.3 ns
Width
3.3 mm
Unit weight
95 mg
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