Specification
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Mf Part No.
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Brand
Infineon
Item Category
IGBT Modules
BatchNumber
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Infineon
FS50R12W2T4_B11
is available at Allchips.100% original and new guarantee. If comprehensive data for
FS50R12W2T4_B11
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk,
alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
Product
IGBT Silicon Modules
Collector - Emitter maximum voltage VCEO
1200 V
Collector - emitter saturation voltage
2.15 V
Continuous collector current at 25 ° C
83 A
Gate-emitter leakage current
100 nA
Pd - Power Dissipation
335 W
The maximum working temperature
+ 150 C
Gate / emitter maximum voltage
+/- 20 V
Minimum working temperature
- 40 C
Installation style
Screw
Unit weight
39 g
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