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IGW50N65F5FKSA1

Non-unpack
Specification
Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
Mf Part No.
--
Brand
Infineon
Item Category
IGBT Transistors
BatchNumber
1631
  • Details
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  • Guarantee
Infineon IGW50N65F5FKSA1 is available at Allchips.100% original and new guarantee. If comprehensive data for IGW50N65F5FKSA1 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Package / case
TO-247-3
Installation style
Through Hole
Configuration
Single
Collector - Emitter maximum voltage VCEO
650 V
Collector - emitter saturation voltage
1.6 V
Gate / emitter maximum voltage
+/- 20 V
Continuous collector current at 25 ° C
80 A
Pd - Power Dissipation
305 W
Minimum working temperature
- 40 C
The maximum working temperature
+ 175 C
Series
TRENCHSTOP 5 F5
Gate-emitter leakage current
100 nA
Unit weight
38 g

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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