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IPA50R650CE

Specification

Mf Part No.

Brand

Infineon

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

Through Hole

Package / case

TO-220FP-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - continuous drain current

9 A

Rds On - Drain-Source On-Resistance

590 mOhms

Vgs th - gate-source threshold voltage

2.5 V

Vgs - gate-source voltage

20 V

Qg - gate charge

15 nC

Minimum working temperature

- 40 C

The maximum working temperature

+ 150 C

Configuration

Single

Qualifications

AEC-Q100

Channel mode

Enhancement

Fall time

13 ns

Height

16.15 mm

Length

10.65 mm

Pd - Power Dissipation

27.2 W

Rise Time

5 ns

Series

CoolMOS CE

Factory packing quantity

500

Transistor type

1 N-Channel

Typical shutdown delay time

27 ns

Typical turn-on delay time

6 ns

Width

4.85 mm

Unit weight

6 g

	Ship Fee	Lead Time	Processing Time
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