Specification
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MPQ
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MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-7
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - continuous drain current
180 A
Rds On - Drain-Source On-Resistance
1.2 mOhms
Vgs th - gate-source threshold voltage
2.1 V
Vgs - gate-source voltage
20 V
Qg - gate charge
124 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
14 ns
Forward transconductance - minimum
120 S
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
214 W
Product
OptiMOS Power
Rise Time
18 ns
Series
OptiMOS 5
Factory packing quantity
1000
Transistor type
1 N-Channel
Types
OptiMOS Power Transistor
Typical shutdown delay time
47 ns
Typical turn-on delay time
22 ns
Width
9.25 mm
Unit weight
1.600 g
