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IPB034N06L3GATMA1

Specification

Mf Part No.

Brand

Infineon

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

TO-263-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - continuous drain current

90 A

Rds On - Drain-Source On-Resistance

2.7 mOhms

Vgs th - gate-source threshold voltage

1.2 V

Vgs - gate-source voltage

20 V

Qg - gate charge

79 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 175 C

Configuration

Single

Channel mode

Enhancement

Fall time

13 ns

Forward transconductance - minimum

77 S

Height

4.4 mm

Length

10 mm

Pd - Power Dissipation

167 W

Rise Time

78 ns

Series

OptiMOS 3

Factory packing quantity

1000

Transistor type

1 N-Channel

Typical shutdown delay time

64 ns

Typical turn-on delay time

25 ns

Width

9.25 mm

Unit weight

4 g

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