Specification
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Mf Part No.
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Brand
Infineon
Item Category
MOSFET
BatchNumber
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Infineon
IPB034N06L3GATMA1
is available at Allchips.100% original and new guarantee. If comprehensive data for
IPB034N06L3GATMA1
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - continuous drain current
90 A
Rds On - Drain-Source On-Resistance
2.7 mOhms
Vgs th - gate-source threshold voltage
1.2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
79 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
13 ns
Forward transconductance - minimum
77 S
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
167 W
Rise Time
78 ns
Series
OptiMOS 3
Factory packing quantity
1000
Transistor type
1 N-Channel
Typical shutdown delay time
64 ns
Typical turn-on delay time
25 ns
Width
9.25 mm
Unit weight
4 g
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