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IPB120P04P4-04

Non-unpack
Specification
--
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
--
  • Details
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Infineon IPB120P04P4-04 is available at Allchips.100% original and new guarantee. If comprehensive data for IPB120P04P4-04 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 40 V
Id - continuous drain current
- 120 A
Rds On - Drain-Source On-Resistance
3.5 mOhms
Vgs - gate-source voltage
20 V
Qg - gate charge
158 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q100
Fall time
52 ns
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
136 W
Rise Time
20 ns
Series
OptiMOS-P2
Factory packing quantity
1000
Transistor type
1 P-Channel
Typical shutdown delay time
49 ns
Typical turn-on delay time
30 ns
Width
9.25 mm
Unit weight
4 g

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Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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