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IPB180P04P4L02ATMA1
Specification
Trans MOSFET P-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
2008
MPQ
1
Stock
8
MOQ
5
Tiered Quantity
US Dollar
5
$2.7919
Lead Time:6-12
Days
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- Payment Method
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IPB180P04P4L02ATMA1
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IPB180P04P4L02ATMA1
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-7
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 40 V
Id - continuous drain current
- 180 A
Rds On - Drain-Source On-Resistance
1.8 mOhms
Vgs th - gate-source threshold voltage
- 2.2 V
Vgs - gate-source voltage
16 V
Qg - gate charge
286 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
119 ns
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
150 W
Rise Time
28 ns
Series
XPB180P04
Factory packing quantity
1000
Transistor type
1 P-Channel
Typical shutdown delay time
146 ns
Typical turn-on delay time
32 ns
Width
9.25 mm
Unit weight
1.600 g
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