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IPB35N10S3L26ATMA1

Non-unpack
Specification
--
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
--
MPQ
1000
Stock
0
MOQ
1000
Tiered Quantity
US Dollar
1
$10.881
10
$9.2781
100
$7.1019
500
$6.2829
1000
$4.9608
2000
$4.3992
10000
$4.2354
 
Lead Time:5-7 Days
Stock Limited ,if you want to buy,please Contact Us
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Infineon IPB35N10S3L26ATMA1 is available at Allchips.100% original and new guarantee. If comprehensive data for IPB35N10S3L26ATMA1 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
35 A
Rds On - Drain-Source On-Resistance
20.3 mOhms
Vgs th - gate-source threshold voltage
1.2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
39 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
3 ns
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
71 W
Rise Time
4 ns
Series
XPB35N10
Factory packing quantity
1000
Transistor type
1 N-Channel
Typical shutdown delay time
18 ns
Typical turn-on delay time
6 ns
Width
9.25 mm
Unit weight
4 g

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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