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IPB600N25N3GATMA1

Non-unpack
Specification
Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1819
  • Details
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Infineon IPB600N25N3GATMA1 is available at Allchips.100% original and new guarantee. If comprehensive data for IPB600N25N3GATMA1 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
250 V
Id - continuous drain current
25 A
Rds On - Drain-Source On-Resistance
51 mOhms
Vgs th - gate-source threshold voltage
2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
29 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
8 ns
Forward transconductance - minimum
24 S
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
136 W
Rise Time
10 ns
Series
OptiMOS 3
Factory packing quantity
1000
Transistor type
1 N-Channel
Typical shutdown delay time
22 ns
Typical turn-on delay time
10 ns
Width
9.25 mm
Unit weight
2 g

Shipping Type Ship Fee Lead Time Processing Time
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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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