Specification
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - continuous drain current
6.1 A
Rds On - Drain-Source On-Resistance
600 mOhms
Vgs th - gate-source threshold voltage
3.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
21 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
17 ns
Height
4.4 mm
Length
10 mm
Pd - Power Dissipation
60 W
Rise Time
12 ns
Series
CoolMOS CE
Factory packing quantity
1000
Transistor type
1 N-Channel
Types
600 V CoolMOS C6 Power Transistor
Typical shutdown delay time
75 ns
Typical turn-on delay time
17 ns
Width
9.25 mm
Unit weight
4 g
