IPD50N06S4L12ATMA2
Specification
Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1737
MPQ
1
Stock
1370
MOQ
21
Tiered Quantity
US Dollar
21
$0.5707
25
$0.5679
50
$0.5654
100
$0.4011
250
$0.4002
500
$0.3993
1000
$0.333
Lead Time:6-12
Days
- Details
- Shipping
- Payment Method
- Guarantee
Infineon
IPD50N06S4L12ATMA2
is available at Allchips.100% original and new guarantee. If comprehensive data for
IPD50N06S4L12ATMA2
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - continuous drain current
50 A
Rds On - Drain-Source On-Resistance
9.6 mOhms
Vgs th - gate-source threshold voltage
1.7 V
Vgs - gate-source voltage
16 V
Qg - gate charge
30 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
5 ns
Forward transconductance - minimum
-
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
50 W
Rise Time
2 ns
Series
IPD50N06
Factory packing quantity
2500
Transistor type
1 N-Channel
Typical shutdown delay time
25 ns
Typical turn-on delay time
6 ns
Width
6.22 mm
Unit weight
4 g
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