Specification
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - continuous drain current
7.1 A
Rds On - Drain-Source On-Resistance
520 mOhms
Vgs - gate-source voltage
20 V
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
17 ns
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
66 W
Rise Time
14 ns
Series
CoolMOS CE
Factory packing quantity
2500
Transistor type
1 N-Channel
Typical shutdown delay time
80 ns
Typical turn-on delay time
35 ns
Width
6.22 mm
Unit weight
4 g
